vishay siliconix si6466adq document number: 71182 s-80682-rev. c, 31-mar-08 www.vishay.com 1 n-channel 2.5-v (g-s) mosfet features ? halogen-free ? trenchfet ? power mosfets ? 100 % r g tested product summary v ds (v) r ds(on) ( )i d (a) 20 0.014 at v gs = 4.5 v 8.1 0.020 at v gs = 2.5 v 6.6 d s s g 1 2 3 4 8 7 6 5 d s s d tssop-8 top view ordering information: si6466adq-t1-ge3 (lead (pb)-free and halogen-free) d g s* n-channel mosfet * source pins 2, 3, 6 and 7 must be tied common. notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) a t a = 25 c i d 8.1 6.8 a t a = 70 c 6.6 5.4 pulsed drain current (10 s pulse width) i dm 30 continuous source current (diode conduction) a i s 1.35 0.95 maximum power dissipation a t a = 25 c p d 1.5 1.05 w t a = 70 c 1.0 0.67 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 65 83 c/w steady state 100 120 maximum junction-to-foot steady state r thjf 43 52 rohs compliant
www.vishay.com 2 document number: 71182 s-80682-rev. c, 31-mar-08 vishay siliconix si6466adq notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.45 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v 1 a v ds = 16 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 20 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 8.1 a 0.011 0.014 v gs = 2.5 v, i d = 6.6 a 0.017 0.020 forward transconductance a g fs v ds = 10 v, i d = 8.1 a 30 s diode forward voltage a v sd i s = 1.35 a, v gs = 0 v 0.65 1.1 v dynamic b total gate charge q g v ds = 10 v, v gs = 5 v, i d = 8.1 a 18 27 nc gate-source charge q gs 3.2 gate-drain charge q gd 4 gate resistance r g 0.5 1.8 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 10 i d ? 1 a, v gen = 4.5 v, r g = 6 27 45 ns rise time t r 34 50 turn-off delay time t d(off) 76 120 fall time t f 30 50 source-drain reverse recovery time t rr i f = 1.5 a, di/dt = 100 a/s 35 70 output characteristics 0 6 12 18 24 30 024681 0 v gs = 5 thru 2.5 v v ds - drain-to-source voltage (v) - drain current (a) i d 1.5 v 2 v transfer characteristics 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 t c = 125 c - 5 5 c 25 c v gs - gate-to-source voltage (v) - drain current (a) i d
document number: 71182 s-80682-rev. c, 31-mar-08 www.vishay.com 3 vishay siliconix si6466adq typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage - on-resistance ( ) r ds(on) 0.00 0.01 0.02 0.03 0.04 0 6 12 18 24 30 i d - drain current (a) v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 048121620 v ds = 10 v i d = 8.1 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 0.0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c 30 10 1 v sd - source-to-drain voltage (v) - source current (a) i s t j = 150 c capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage v ds - drain-to-source voltage (v) c rss c - capacitance (pf) 0 600 1200 1800 2400 3000 048121620 c oss c iss 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 8.1 a t j - junction temperature (c) (normalized) - on-resistance r ds(on) 0.00 0.01 0.02 0.03 0.04 0.05 0246810 i d = 8.1 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 71182 s-80682-rev. c, 31-mar-08 vishay siliconix si6466adq typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71182 . threshold voltage - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) single pulse power, junction-to-ambient 0 60 80 20 40 power (w) time (s) 0.1 10 1 0.01 0.001 100 normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 100 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square w ave pulse duration (s) normalized effective transient thermal impedance
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